#Rohm, #2SB1132T100R, #IGBT_Module, #IGBT, 2SB1132T100R TRANSISTOR PNP 32V 1A SOT-89; 2SB1132T100R
Manufacturer: Rohm Semiconductor Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Transistor Polarity: PNP Configuration: Single Collector- Emitter Voltage VCEO Max: - 32 V Collector- Base Voltage VCBO: - 40 V Emitter- Base Voltage VEBO: - 5 V Collector-Emitter Saturation Voltage: - 0.2 V Maximum DC Collector Current: - 2 A Gain Bandwidth Product fT: 150 MHz Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Series: 2SB1132 DC Current Gain hFE Max: 390 Height: 1.5 mm Length: 4.5 mm Packaging: Cut Tape Packaging: MouseReel Packaging: Reel Width: 2.5 mm Brand: ROHM Semiconductor Continuous Collector Current: - 1 A DC Collector/Base Gain hfe Min: 82 Pd - Power Dissipation: 2 W Product Type: BJTs - Bipolar Transistors Factory Pack Quantity: 1000 Subcategory: Transistors Unit Weight: 0.004603 oz TRANSISTOR PNP 32V 1A SOT-89