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TOSHIBA GT30F123 New • Insulated Gate Bipolar Transistor , GT30F123 pictures, GT30F123 price, GT30F123 supplier
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30F123/ GT30F123 IGBT. 

• Breakdown Voltage VCES (V) @Ta = 25˚C : 300V

• IGBT Current Rating IC (A) @Ta = 25˚C : 200A

• Insulated Gate Bipolar Transistor

• Case Style: TO220SIS/ Short Leads
 
• Insulated Gate Bipolar Transistor

Shunlongwei Inspected every GT30F123 before Ship, All GT30F123 with 6 months warranty.
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