IGBT is an acronym for "Insulated Gate Bipolar Transistor" and is also called an insulated gate bipolar transistor.
IGBT is classified as the field of power semiconductor components and transistors.
The characteristics of power semiconductor components In addition to IGBTs, power semiconductor components (transistor field) representative products include MOSFET, BIPOLAR, etc., which are mainly used as semiconductor switches.
According to their respective supportable switching speeds, BIPOLAR is suitable for medium-speed switching, and MOSFET is suitable for high-frequency fields.
The IGBT is a component with a MOSFET structure in the input part and a BIPOLAR structure in the output part. Through the combination of the two, it is not only a bipolar element that uses two carriers of electrons and holes, but also a low saturation voltage (combined with power MOSFET). Low on-resistance equivalent) and faster switching characteristics of the transistor.
Although it has faster switching characteristics, it is still inferior to power MOSFET, which is the weakness of IGBT.
MOSFET refers to a Field-Effect Transistor (Field-Effect Transistor) with a three-layer structure of Metal (metal)-Oxide (semiconductor oxide)-Semiconductor (semiconductor). BIPOLAR refers to the use of bipolar elements, and two semiconductors called p-type and n-type are used to form current-working transistors with n-p-n and p-n-p structures.