#Infineon Technologies, #IKD04N60RF, #IGBT_Module, #IGBT, IKD04N60RF Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-252, DPAK-3; IKD04N60RF
Manufacturer Part Number: IKD04N60RFPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: Infineon TECHNOLOGIES AGPart Package Code: TO-252Package Description: SMALL OUTLINE, R-PSSO-G2Pin Count: 3Manufacturer: Infineon Technologies AGRisk Rank: 2.15Case Connection: COLLECTORCollector Current-Max (IC): 8 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Thr Voltage-Max: 5.7 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-252JESD-30 Code: R-PSSO-G2JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 2Operating Temperature-Max: 175 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 75 WSubcategory: Insulated Gate BIP TransistorsSurface Mount: YESTerminal Finish: Tin (Sn)Terminal Form: GULL WINGTerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-252, DPAK-3