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Infineon introduces the next generation of dual-channel isolated gate driver ICs.

A 3.3 kW switched-mode power supplies (SMPS) can achieve power densities of 100 W/inch3 by utilizing the latest technologies, including superjunction (SJ silicon) and silicon carbide (SiC) power MOSFETs in the totem-pole PFC stage as well as gallium nitride (GaN) power switches for high-voltage DC-DC stage operation. Digital control of the PFC and DC-DC stages is essential for maximum efficiency and robustness, as is the use of optimum gate drive solutions. To meet the latest design and application needs, Infineon Technologies AG introduces the next generation of the EiceDRIVER product family of dual-channel galvanically isolated gate driver ICs.

This product family spans multiple under-voltage lockout (UVLO) variants, isolation levels, and package options to provide a comprehensive solution for various applications. The new portfolio combines robust isolation technology that meets the latest isolation standards with excellent electrical parameters to deliver high efficiency and reliable operation over a wide temperature range, extending the design’s lifetime. These drivers can be used in a wide range of applications, including server and telecom SMPS, solar inverters and energy storage systems, motor drives and battery-powered applications, EV charging, and high-performance computing.