International Rectifier IRF1010EZSTRLP IGBT Module

Manufacturer Part Number: IRF1010EZSTRLPBFRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: Infineon TECHNOLOGIES AGPackage Description: SMALL OUTLINE, R-PSSO-G2ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 5.03Additional Feature: AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCEAvalanche Energy Rating (Eas): 99 mJCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 60 VDrain Current-Max (Abs) (ID): 75 ADrain Current-Max (ID): 75 ADrain-source On Resistance-Max: 0.0085 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJEDEC-95 Code: TO-263ABJESD-30 Code: R-PSSO-G2JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 2Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 175 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 140 WPulsed Drain Current-Max (IDM): 340 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrierTerminal Form: GULL WINGTerminal Position: SINGLETime Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3