Sell IR IRF630S New Stock

IRF630S Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-220, 3 PIN; IRF630S
  • Part Number:    

    IRF630S

  • Category:    

    ICs

  • Manufacturer:    

    IR

  • Packaging:    

    TO-263-2

  • Data Code:    

    14+PBF

  • Qty Available:    

    15840

Email us: sales@shunlongwei.com
inquiry now

IR IRF630S New Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-220, 3 PIN, IRF630S pictures, IRF630S price, IRF630S supplier
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Email: sales@shunlongwei.com

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Manufacturer Part Number: IRF630S
Part Life Cycle Code: Obsolete
Ihs Manufacturer: VISHAY SILICONIX
Package Description: SMALL OUTLINE, R-PSSO-G2
Pin Count: 3
ECCN Code: EAR99
Manufacturer: Vishay Siliconix
Risk Rank: 5.05
Additional Feature: AVALANCHE RATED
Avalanche Energy Rating (Eas): 250 mJ
Case Connection: DRAIN
Configuration: SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min: 200 V
Drain Current-Max (ID): 9 A
Drain-source On Resistance-Max: 0.4 Ω
FET Technology: METAL-OXIDE SEMICONDUCTOR
JESD-30 Code: R-PSSO-G2
JESD-609 Code: e0
Number of Elements: 1
Number of Terminals: 2
Operating Mode: ENHANCEMENT MODE
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Polarity/Channel Type: N-CHANNEL
Pulsed Drain Current-Max (IDM): 36 A
Qualification Status: Not Qualified
Surface Mount: YES
Terminal Finish: TIN LEAD
Terminal Form: GULL WING
Terminal Position: SINGLE
Transistor Application: SWITCHING
Transistor Element Material: SILICON
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-220, 3 PIN

Shunlongwei Inspected every IRF630S before Ship, All IRF630S with 6 months warranty.

Shunlongwei Co. Ltd.

Contact: Alice Peng

Tel:+86-755-82732562

E-mail: sales@shunlongwei.com

ADD:Rom512,Bldg#505, Shangbu Industrial Area, Huaqiang North Rd., SZ,518000,China.