Sell IR IRF8113 New Stock

IRF8113 Power Field-Effect Transistor, 17.2A I(D), 30V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8; IRF8113
  • Part Number:    

    IRF8113

  • Category:    

    ICs

  • Manufacturer:    

    IR

  • Packaging:    

    SOP8

  • Data Code:    

    01+

  • Qty Available:    

    30437

Email us: sales@shunlongwei.com
inquiry now

IR IRF8113 New Power Field-Effect Transistor, 17.2A I(D), 30V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8, IRF8113 pictures, IRF8113 price, IRF8113 supplier
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Email: sales@shunlongwei.com

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Manufacturer Part Number: IRF8113
Rohs Code: Yes
Part Life Cycle Code: Obsolete
Ihs Manufacturer: INFINEON TECHNOLOGIES AG
Package Description: SMALL OUTLINE, R-PDSO-G8
Manufacturer: Infineon Technologies AG
Risk Rank: 5.71
Avalanche Energy Rating (Eas): 48 mJ
Configuration: SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min: 30 V
Drain Current-Max (ID): 17.2 A
Drain-source On Resistance-Max: 0.0056 Ω
FET Technology: METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code: MS-012AA
JESD-30 Code: R-PDSO-G8
Moisture Sensitivity Level: 1
Number of Elements: 1
Number of Terminals: 8
Operating Mode: ENHANCEMENT MODE
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Pulsed Drain Current-Max (IDM): 135 A
Surface Mount: YES
Terminal Finish: NOT SPECIFIED
Terminal Form: GULL WING
Terminal Position: DUAL
Time
Power Field-Effect Transistor, 17.2A I(D), 30V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8

Shunlongwei Inspected every IRF8113 before Ship, All IRF8113 with 6 months warranty.

Shunlongwei Co. Ltd.

Contact: Alice Peng

Tel:+86-755-82732562

E-mail: sales@shunlongwei.com

ADD:Rom512,Bldg#505, Shangbu Industrial Area, Huaqiang North Rd., SZ,518000,China.