IR IRFBC40LC New Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN, IRFBC40LC pictures, IRFBC40LC price, IRFBC40LC supplier
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Manufacturer Part Number: IRFBC40LC
Rohs Code: No
Part Life Cycle Code: Transferred
Ihs Manufacturer: VISHAY SILICONIX
Part Package Code: TO-220AB
Package Description: FLANGE MOUNT, R-PSFM-T3
Pin Count: 3
Manufacturer: Vishay Siliconix
Risk Rank: 5.03
Additional Feature: AVALANCHE RATED
Avalanche Energy Rating (Eas): 530 mJ
Case Connection: DRAIN
Configuration: SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min: 600 V
Drain Current-Max (ID): 6.2 A
Drain-source On Resistance-Max: 1.2 Ω
FET Technology: METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code: TO-220AB
JESD-30 Code: R-PSFM-T3
JESD-609 Code: e0
Number of Elements: 1
Number of Terminals: 3
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Pulsed Drain Current-Max (IDM): 25 A
Qualification Status: Not Qualified
Surface Mount: NO
Terminal Finish: TIN LEAD
Terminal Form: THROUGH-HOLE
Terminal Position: SINGLE
Time
Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Shunlongwei Inspected every IRFBC40LC before Ship, All IRFBC40LC with 6 months warranty.
