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IRG7RC07SD,
# Infineon Technologies AG #IRG7RC07SD New Stock, IRG7RC07SD Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel; IRG7RC07SD, #Integrated_Circuit, #Integrated, #IRG7RC07SD
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https://www.slw-ele.com/irg7rc07sd.html
Manufacturer Part Number: NoLOGIES AG
Package Description: Nologies AG
Risk Rank: 5.21
Collector Current-Max (IC): 16 A
Collector-Emitter Voltage-Max: 600 V
Fall Time-Max (tf): 670 ns
Gate-Emitter Thr Voltage-Max: 5.5 V
Gate-Emitter Voltage-Max: 30 V
Operating Temperature-Max: 150 °C
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 39 W
Rise Time-Max (tr): 30 ns
Subcategory: Insulated Gate BIP Transistors
Surface Mount: YES
Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel
