#Microsemi HI-REL [MIL], #JAN2N6989, #IGBT_Module, #IGBT, JAN2N6989 Power Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 4-Element, NPN, Silicon, TO-116, Plastic/Epoxy, 14 Pin, DIP
Manufacturer Part Number: JAN2N6989Pbfree Code: NoPart Life Cycle Code: ActiveIhs Manufacturer: MICROSEMI CORPPart Package Code: DIPPackage Description: IN-LINE, R-PDIP-T14Pin Count: 14ECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: Microsemi CorporationRisk Rank: 5.22Collector Current-Max (IC): 0.8 ACollector-Emitter Voltage-Max: 50 VConfiguration: SEPARATE, 4 ELEMENTSDC Current Gain-Min (hFE): 100JEDEC-95 Code: TO-116JESD-30 Code: R-PDIP-T14JESD-609 Code: e0Number of Elements: 4Number of Terminals: 14Operating Temperature-Max: 200 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: IN-LINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: NPNQualification Status: QualifiedReference Standard: MIL-19500/559FSurface Mount: NOTerminal Finish: Tin/Lead (Sn/Pb)Terminal Form: THROUGH-HOLETerminal Position: DUALTime Power Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 4-Element, NPN, Silicon, TO-116, Plastic/Epoxy, 14 Pin, DIP-14