Sell SAMSUNG K4D26323QG-VC2A New Stock

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Manufacturer Part Number: K4D26323QG-VC2AT
Rohs Code: Yes
Part Life Cycle Code: Active
Ihs Manufacturer: SAMSUNG SEMICONDUCTOR INC
Manufacturer: Samsung Semiconductor
Risk Rank: 5.75
Access Time-Max: 0.55 ns
Clock Frequency-Max (fCLK): 350 MHz
I/O Type: COMMON
Interleaved Burst Length: 2,4,8
JESD-30 Code: S-PBGA-B144
Memory Density: 134217728 bit
Memory IC Type: DDR DRAM
Memory Width: 32
Number of Terminals: 144
Number of Words: 4194304 words
Number of Words Code: 4000000
Operating Temperature-Max: 65 °C
Organization: 4MX32
Output Characteristics: 3-STATE
Package Body Material: PLASTIC/EPOXY
Package Code: FBGA
Package Equivalence Code: BGA144,12X12,32
Package Shape: SQUARE
Package Style: GRID ARRAY, FINE PITCH
Power Supplies: 1.8 V
Qualification Status: Not Qualified
Refresh Cycles: 4096
Sequential Burst Length: 2,4,8
Standby Current-Max: 0.01 A
Subcategory: DRAMs
Supply Current-Max: 0.44 mA
Supply Voltage-Nom (Vsup): 1.8 V
Surface Mount: YES
Technology: CMOS
Temperature Grade: COMMERCIAL
Terminal Form: BALL
Terminal Pitch: 0.8 mm
Terminal Position: BOTTOM
DDR DRAM, 4MX32, 0.55ns, CMOS, PBGA144,