Sell SAMSUNG K4D26323QG-VC2A New Stock

K4D26323QG-VC2A DDR DRAM, 4MX32, 0.55ns, CMOS, PBGA144,; K4D26323QG-VC2A
  • Part Number:    

    K4D26323QG-VC2A

  • Category:    

    ICs

  • Manufacturer:    

    SAMSUNG

  • Packaging:    

    BGA

  • Data Code:    

    0637+

  • Qty Available:    

    8102

Email us: sales@shunlongwei.com
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SAMSUNG K4D26323QG-VC2A New DDR DRAM, 4MX32, 0.55ns, CMOS, PBGA144,, K4D26323QG-VC2A pictures, K4D26323QG-VC2A price, K4D26323QG-VC2A supplier
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Email: sales@shunlongwei.com

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Manufacturer Part Number: K4D26323QG-VC2AT
Rohs Code: Yes
Part Life Cycle Code: Active
Ihs Manufacturer: SAMSUNG SEMICONDUCTOR INC
Manufacturer: Samsung Semiconductor
Risk Rank: 5.75
Access Time-Max: 0.55 ns
Clock Frequency-Max (fCLK): 350 MHz
I/O Type: COMMON
Interleaved Burst Length: 2,4,8
JESD-30 Code: S-PBGA-B144
Memory Density: 134217728 bit
Memory IC Type: DDR DRAM
Memory Width: 32
Number of Terminals: 144
Number of Words: 4194304 words
Number of Words Code: 4000000
Operating Temperature-Max: 65 °C
Organization: 4MX32
Output Characteristics: 3-STATE
Package Body Material: PLASTIC/EPOXY
Package Code: FBGA
Package Equivalence Code: BGA144,12X12,32
Package Shape: SQUARE
Package Style: GRID ARRAY, FINE PITCH
Power Supplies: 1.8 V
Qualification Status: Not Qualified
Refresh Cycles: 4096
Sequential Burst Length: 2,4,8
Standby Current-Max: 0.01 A
Subcategory: DRAMs
Supply Current-Max: 0.44 mA
Supply Voltage-Nom (Vsup): 1.8 V
Surface Mount: YES
Technology: CMOS
Temperature Grade: COMMERCIAL
Terminal Form: BALL
Terminal Pitch: 0.8 mm
Terminal Position: BOTTOM
DDR DRAM, 4MX32, 0.55ns, CMOS, PBGA144,

Shunlongwei Inspected every K4D26323QG-VC2A before Ship, All K4D26323QG-VC2A with 6 months warranty.

Shunlongwei Co. Ltd.

Contact: Alice Peng

Tel:+86-755-82732562

E-mail: sales@shunlongwei.com

ADD:Rom512,Bldg#505, Shangbu Industrial Area, Huaqiang North Rd., SZ,518000,China.