Sell SAMSUNG K4N51163QE-ZC25 New Stock

K4N51163QE-ZC25 Cache DRAM Module, 32MX16, 0.4ns, CMOS, PBGA84; K4N51163QE-ZC25
  • Part Number:    

    K4N51163QE-ZC25

  • Category:    

    ICs

  • Manufacturer:    

    SAMSUNG

  • Packaging:    

    BGA

  • Data Code:    

    0701+

  • Qty Available:    

    4366

Email us: sales@shunlongwei.com
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SAMSUNG K4N51163QE-ZC25 New Cache DRAM Module, 32MX16, 0.4ns, CMOS, PBGA84, K4N51163QE-ZC25 pictures, K4N51163QE-ZC25 price, K4N51163QE-ZC25 supplier
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Manufacturer Part Number: K4N51163QE-ZC25
Pbfree Code: Yes
Part Life Cycle Code: Obsolete
Ihs Manufacturer: SAMSUNG SEMICONDUCTOR INC
Package Description: FBGA, BGA84,9X15,32
Manufacturer: Samsung Semiconductor
Risk Rank: 5.81
Access Time-Max: 0.4 ns
Clock Frequency-Max (fCLK): 400 MHz
I/O Type: COMMON
Interleaved Burst Length: 4,8
JESD-30 Code: R-PBGA-B84
Memory Density: 536870912 bit
Memory IC Type: CACHE DRAM MODULE
Memory Width: 16
Moisture Sensitivity Level: 3
Number of Terminals: 84
Number of Words: 33554432 words
Number of Words Code: 32000000
Operating Temperature-Max: 85 °C
Organization: 32MX16
Output Characteristics: 3-STATE
Package Body Material: PLASTIC/EPOXY
Package Code: FBGA
Package Equivalence Code: BGA84,9X15,32
Package Shape: RECTANGULAR
Package Style: GRID ARRAY, FINE PITCH
Peak Reflow Temperature (Cel): 260
Power Supplies: 1.8 V
Qualification Status: Not Qualified
Refresh Cycles: 8192
Sequential Burst Length: 4,8
Standby Current-Max: 0.008 A
Subcategory: DRAMs
Supply Current-Max: 0.28 mA
Supply Voltage-Nom (Vsup): 1.8 V
Surface Mount: YES
Technology: CMOS
Temperature Grade: OTHER
Terminal Form: BALL
Terminal Pitch: 0.8 mm
Terminal Position: BOTTOM
Time
Cache DRAM Module, 32MX16, 0.4ns, CMOS, PBGA84

Shunlongwei Inspected every K4N51163QE-ZC25 before Ship, All K4N51163QE-ZC25 with 6 months warranty.

Shunlongwei Co. Ltd.

Contact: Alice Peng

Tel:+86-755-82732562

E-mail: sales@shunlongwei.com

ADD:Rom512,Bldg#505, Shangbu Industrial Area, Huaqiang North Rd., SZ,518000,China.