ST NE32484A-T1 New RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Hetero-junction FET, NE32484A-T1 pictures, NE32484A-T1 price, NE32484A-T1 supplier
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Manufacturer Part Number: NE32484A-T1
Part Life Cycle Code: Obsolete
Ihs Manufacturer: CALIFORNIA EASTERN LABORATORIES
Package Description: DISK BUTTON, O-CRDB-F4
ECCN Code: EAR99
HTS Code: 8541.21.00.75
Manufacturer: California Eastern Laboratories (CEL)
Risk Rank: 5.84
Additional Feature: LOW NOISE
Configuration: SINGLE
DS Breakdown Voltage-Min: 4 V
Drain Current-Max (ID): 0.07 A
FET Technology: HETERO-JUNCTION
Highest Frequency Band: X BAND
JESD-30 Code: O-CRDB-F4
Number of Elements: 1
Number of Terminals: 4
Operating Mode: DEPLETION MODE
Operating Temperature-Max: 150 °C
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Package Shape: ROUND
Package Style: DISK BUTTON
Polarity/Channel Type: N-CHANNEL
Power Gain-Min (Gp): 10 dB
Qualification Status: Not Qualified
Surface Mount: YES
Terminal Form: FLAT
Terminal Position: RADIAL
Transistor Application: AMPLIFIER
Transistor Element Material: GALLIUM ARSENIDE
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Hetero-junction FET
Shunlongwei Inspected every NE32484A-T1 before Ship, All NE32484A-T1 with 6 months warranty.
