Sell MITSUB RD02MUS1B-T112 New Stock

RD02MUS1B-T112 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET; RD02MUS1B-T112
  • Part Number:    

    RD02MUS1B-T112

  • Category:    

    ICs

  • Manufacturer:    

    MITSUB

  • Packaging:    

    QFN

  • Data Code:    

    09+

  • Qty Available:    

    1255

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MITSUB RD02MUS1B-T112 New Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, RD02MUS1B-T112 pictures, RD02MUS1B-T112 price, RD02MUS1B-T112 supplier
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Manufacturer Part Number: RD02MUS1B-T112
Rohs Code: Yes
Part Life Cycle Code: Obsolete
Ihs Manufacturer: MITSUBISHI ELECTRIC CORP
Package Description: ,
Manufacturer: Mitsubishi Electric
Risk Rank: 5.83
Configuration: Single
Drain Current-Max (Abs) (ID): 1.5 A
FET Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 150 °C
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 21.9 W
Subcategory: FET General Purpose Power
Surface Mount: YES
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Shunlongwei Inspected every RD02MUS1B-T112 before Ship, All RD02MUS1B-T112 with 6 months warranty.

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Contact: Alice Peng

Tel:+86-755-82732562

E-mail: sales@shunlongwei.com

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