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Toshiba Semiconductor and Storage RN1108CT(TPL3),RN1108CT(TPL3) pictures,RN1108CT(TPL3) supplier,RN1108CT(TPL3) stock
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Datasheets:RN1107CT-09CTStandard Package:10,000Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) - Single, Pre-BiasedSeries:-Packaging:Tape & Reel (TR)Transistor Type:NPN - Pre-BiasedCurrent - Collector (Ic) (Max):50mAVoltage - Collector Emitter Breakdown (Max):20VResistor - Base (R1) (Ohms):22kResistor - Emitter Base (R2) (Ohms):47kDC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 10mA, 5VVce Saturation (Max) @ Ib, Ic:150mV @ 250µA, 5mACurrent - Collector Cutoff (Max):100nA (ICBO)Frequency - Transition:-Power - Max:50mWMounting Type:Surface MountPackage / Case:SC-101, SOT-883Supplier Device Package:CST3Other Names:RN1108CT(TPL3)TR
Toshiba Semiconductor and Storage RN1108CT(TPL3) New TRAN NPN CST3 20V 50A, RN1108CT(TPL3) pictures, RN1108CT(TPL3) price, RN1108CT(TPL3) supplier
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TRAN NPN CST3 20V 50A

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