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Toshiba Semiconductor and Storage RN1111(TE85LF),RN1111(TE85LF) pictures,RN1111(TE85LF) supplier,RN1111(TE85LF) stock
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Datasheets:RN1110-11Standard Package:3,000Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) - Single, Pre-BiasedSeries:-Packaging:Tape & Reel (TR)Transistor Type:NPN - Pre-BiasedCurrent - Collector (Ic) (Max):100mAVoltage - Collector Emitter Breakdown (Max):50VResistor - Base (R1) (Ohms):10kResistor - Emitter Base (R2) (Ohms):-DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5VVce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mACurrent - Collector Cutoff (Max):100nA (ICBO)Frequency - Transition:250MHzPower - Max:100mWMounting Type:Surface MountPackage / Case:SC-75, SOT-416Supplier Device Package:SSMOther Names:RN1111(TE85LF)TR
Toshiba Semiconductor and Storage RN1111(TE85L,F) New TRAN NPN SSM 50V 100A, RN1111(TE85L,F) pictures, RN1111(TE85L,F) price, RN1111(TE85L,F) supplier
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TRAN NPN SSM 50V 100A

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