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Toshiba Semiconductor and Storage RN1111ACT(TPL3),RN1111ACT(TPL3) pictures,RN1111ACT(TPL3) supplier,RN1111ACT(TPL3) stock
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Standard Package:10,000Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) - Single, Pre-BiasedSeries:-Packaging:Tape & Reel (TR)Transistor Type:NPN - Pre-BiasedCurrent - Collector (Ic) (Max):100mAVoltage - Collector Emitter Breakdown (Max):50VResistor - Base (R1) (Ohms):10kResistor - Emitter Base (R2) (Ohms):-DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5VVce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mACurrent - Collector Cutoff (Max):100nA (ICBO)Frequency - Transition:250MHzPower - Max:100mWMounting Type:*Package / Case:*Supplier Device Package:*Other Names:RN1111ACT(TPL3)TR
Toshiba Semiconductor and Storage RN1111ACT(TPL3) New TRAN NPN CST3 50V 100A, RN1111ACT(TPL3) pictures, RN1111ACT(TPL3) price, RN1111ACT(TPL3) supplier
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TRAN NPN CST3 50V 100A

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