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Toshiba Semiconductor and Storage RN1405T5LFT,RN1405T5LFT pictures,RN1405T5LFT supplier,RN1405T5LFT stock
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Datasheets:RN1401 - 1406Product Photos:SOT-23-3Standard Package:3,000Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) - Single, Pre-BiasedSeries:-Packaging:Tape & Reel (TR)Transistor Type:NPN - Pre-BiasedCurrent - Collector (Ic) (Max):100mAVoltage - Collector Emitter Breakdown (Max):50VResistor - Base (R1) (Ohms):2.2kResistor - Emitter Base (R2) (Ohms):47kDC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5VVce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mACurrent - Collector Cutoff (Max):500nAFrequency - Transition:250MHzPower - Max:200mWMounting Type:Surface MountPackage / Case:TO-236-3, SC-59, SOT-23-3Supplier Device Package:S-Mini
Toshiba Semiconductor and Storage RN1405T5LFT New TRANS PREBIAS NPN 200MW SMINI, RN1405T5LFT pictures, RN1405T5LFT price, RN1405T5LFT supplier
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