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Toshiba Semiconductor and Storage RN1416LF,RN1416LF pictures,RN1416LF supplier,RN1416LF stock
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Datasheets:RN1414-18Standard Package:3,000Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) - Single, Pre-BiasedSeries:-Packaging:*Transistor Type:NPN - Pre-BiasedCurrent - Collector (Ic) (Max):100mAVoltage - Collector Emitter Breakdown (Max):50VResistor - Base (R1) (Ohms):4.7kResistor - Emitter Base (R2) (Ohms):10kDC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 10mA, 5VVce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mACurrent - Collector Cutoff (Max):100nA (ICBO)Frequency - Transition:250MHzPower - Max:200mWMounting Type:*Package / Case:*Supplier Device Package:*Other Names:RN1416LFTR
Toshiba Semiconductor and Storage RN1416,LF New TRAN NPN S-MINI 50V 100A, RN1416,LF pictures, RN1416,LF price, RN1416,LF supplier
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TRAN NPN S-MINI 50V 100A

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