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Toshiba Semiconductor and Storage RN2101CT(TPL3),RN2101CT(TPL3) pictures,RN2101CT(TPL3) supplier,RN2101CT(TPL3) stock
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Datasheets:RN2101CT-06CTStandard Package:10,000Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) - Single, Pre-BiasedSeries:-Packaging:*Transistor Type:PNP - Pre-BiasedCurrent - Collector (Ic) (Max):50mAVoltage - Collector Emitter Breakdown (Max):20VResistor - Base (R1) (Ohms):4.7kResistor - Emitter Base (R2) (Ohms):4.7kDC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 10mA, 5VVce Saturation (Max) @ Ib, Ic:150mV @ 250µA, 5mACurrent - Collector Cutoff (Max):100nA (ICBO)Frequency - Transition:-Power - Max:50mWMounting Type:*Package / Case:*Supplier Device Package:*Other Names:RN2101CT(TPL3)TR
Toshiba Semiconductor and Storage RN2101CT(TPL3) New TRAN PNP CST3 -20V -50A, RN2101CT(TPL3) pictures, RN2101CT(TPL3) price, RN2101CT(TPL3) supplier
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TRAN PNP CST3 -20V -50A

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