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Toshiba Semiconductor and Storage RN2102ACT(TPL3),RN2102ACT(TPL3) pictures,RN2102ACT(TPL3) supplier,RN2102ACT(TPL3) stock
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Datasheets:RN2101ACT-06ACTStandard Package:10,000Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) - Single, Pre-BiasedSeries:-Packaging:*Transistor Type:PNP - Pre-BiasedCurrent - Collector (Ic) (Max):80mAVoltage - Collector Emitter Breakdown (Max):50VResistor - Base (R1) (Ohms):10kResistor - Emitter Base (R2) (Ohms):10kDC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 10mA, 5VVce Saturation (Max) @ Ib, Ic:150mV @ 250µA, 5mACurrent - Collector Cutoff (Max):100nA (ICBO)Frequency - Transition:*Power - Max:100mWMounting Type:*Package / Case:*Supplier Device Package:*Other Names:RN2102ACT(TPL3)TR
Toshiba Semiconductor and Storage RN2102ACT(TPL3) New TRAN PNP CST3 50V 100A, RN2102ACT(TPL3) pictures, RN2102ACT(TPL3) price, RN2102ACT(TPL3) supplier
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TRAN PNP CST3 50V 100A

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