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Toshiba Semiconductor and Storage RN2104(T5LFT),RN2104(T5LFT) pictures,RN2104(T5LFT) supplier,RN2104(T5LFT) stock
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Datasheets:RN2101-06Standard Package:3,000Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) - Single, Pre-BiasedSeries:-Packaging:*Transistor Type:PNP - Pre-BiasedCurrent - Collector (Ic) (Max):100mAVoltage - Collector Emitter Breakdown (Max):50VResistor - Base (R1) (Ohms):47kResistor - Emitter Base (R2) (Ohms):47kDC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5VVce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mACurrent - Collector Cutoff (Max):100nA (ICBO)Frequency - Transition:200MHzPower - Max:100mWMounting Type:*Package / Case:*Supplier Device Package:*Other Names:RN2104(T5LFT)TR
Toshiba Semiconductor and Storage RN2104(T5L,F,T) New TRAN PNP SSM -50V -100A, RN2104(T5L,F,T) pictures, RN2104(T5L,F,T) price, RN2104(T5L,F,T) supplier
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TRAN PNP SSM -50V -100A

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