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Toshiba Semiconductor and Storage RN2109MFV(TPL3),RN2109MFV(TPL3) pictures,RN2109MFV(TPL3) supplier,RN2109MFV(TPL3) stock
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Datasheets:RN210(7-9)MFVStandard Package:8,000Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) - Single, Pre-BiasedSeries:-Packaging:Tape & Reel (TR)Transistor Type:PNP - Pre-BiasedCurrent - Collector (Ic) (Max):100mAVoltage - Collector Emitter Breakdown (Max):50VResistor - Base (R1) (Ohms):47kResistor - Emitter Base (R2) (Ohms):22kDC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 10mA, 5VVce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mACurrent - Collector Cutoff (Max):500nAFrequency - Transition:-Power - Max:150mWMounting Type:Surface MountPackage / Case:SOT-723Supplier Device Package:VESM
Toshiba Semiconductor and Storage RN2109MFV(TPL3) New TRANS PREBIAS PNP 150MW VESM, RN2109MFV(TPL3) pictures, RN2109MFV(TPL3) price, RN2109MFV(TPL3) supplier
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TRANS PREBIAS PNP 150MW VESM

Shunlongwei Inspected every RN2109MFV(TPL3) before Ship, All RN2109MFV(TPL3) with 6 months warranty.
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