Sell SILICON SI2303DS-T1 New Stock

#SI2303DS-T1 SILICON SI2303DS-T1 New Power Field-Effect Transistor, 1.7A I(D), 30V, 0.24ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, TO-236, 3 PIN, SI2303DS-T1 pictures, SI2303DS-T1 price, #SI2303DS-T1 supplier
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Manufacturer Part Number: SI2303DS-T1
Part Life Cycle Code: Obsolete
Ihs Manufacturer: VISHAY SILICONIX
Part Package Code: SOT-23
Package Description: SMALL OUTLINE, R-PDSO-G3
Pin Count: 3
ECCN Code: EAR99
HTS Code: 8541.29.00.95
Manufacturer: Vishay Siliconix
Risk Rank: 5.63
Configuration: SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min: 30 V
Drain Current-Max (ID): 1.7 A
Drain-source On Resistance-Max: 0.24 Ω
FET Technology: METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code: TO-236
JESD-30 Code: R-PDSO-G3
JESD-609 Code: e0
Number of Elements: 1
Number of Terminals: 3
Operating Mode: ENHANCEMENT MODE
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Polarity/Channel Type: P-CHANNEL
Pulsed Drain Current-Max (IDM): 10 A
Qualification Status: Not Qualified
Surface Mount: YES
Terminal Finish: TIN LEAD
Terminal Form: GULL WING
Terminal Position: DUAL
Transistor Element Material: SILICON
Power Field-Effect Transistor, 1.7A I(D), 30V, 0.24ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, TO-236, 3 PIN