#Vishay Siliconix, #SI4942DY_T1_GE3, #IGBT_Module, #IGBT, SI4942DY-T1-GE3 TRANSISTOR 5300 mA, 40 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIAN
Manufacturer Part Number: SI4942DY-T1-GE3Pbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: VISHAY SILICONIXPart Package Code: SOTPackage Description: SMALL OUTLINE, R-PDSO-G8Pin Count: 8ECCN Code: EAR99Manufacturer: Vishay SiliconixRisk Rank: 5.81Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 40 VDrain Current-Max (Abs) (ID): 5.3 ADrain Current-Max (ID): 5.3 ADrain-source On Resistance-Max: 0.021 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-G8Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 2.1 WQualification Status: Not QualifiedSubcategory: FET General Purpose PowersSurface Mount: YESTerminal Finish: PURE MATTE TIN (SN)Terminal Form: GULL WINGTerminal Position: DUALTime TRANSISTOR 5300 mA, 40 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal