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SI5402DC-T1-E3
VISHAY SI5402DC-T1-E3 New Small Signal Field-Effect Transistor, 4.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, 1206-8, CHIPFET-8, SI5402DC-T1-E3 pictures, SI5402DC-T1-E3 price, #SI5402DC-T1-E3 supplier
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Email: sales@shunlongwei.com
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Manufacturer Part Number: SI5402DC-T1-E3
Rohs Code: Yes
Part Life Cycle Code: Obsolete
Ihs Manufacturer: VISHAY INTERTECHNOLOGY INC
Package Description: SMALL OUTLINE, R-PDSO-C8
ECCN Code: EAR99
Manufacturer: Vishay Intertechnologies
Risk Rank: 5.14
Configuration: SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min: 30 V
Drain Current-Max (Abs) (ID): 4.9 A
Drain Current-Max (ID): 4.9 A
Drain-source On Resistance-Max: 0.035 Ω
FET Technology: METAL-OXIDE SEMICONDUCTOR
JESD-30 Code: R-PDSO-C8
JESD-609 Code: e3
Moisture Sensitivity Level: 1
Number of Elements: 1
Number of Terminals: 8
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 2.5 W
Subcategory: FET General Purpose Powers
Surface Mount: YES
Terminal Finish: Matte Tin (Sn)
Terminal Form: C BEND
Terminal Position: DUAL
Time
Small Signal Field-Effect Transistor, 4.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, 1206-8, CHIPFET-8
Shunlongwei Inspected Every SI5402DC-T1-E3 Before Ship, All SI5402DC-T1-E3 with 6 months warranty.
