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SI5480DU-T1-E3
VISHAY SI5480DU-T1-E3 New Power Field-Effect Transistor, 12A I(D), 30V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, CHIPFET-8, SI5480DU-T1-E3 pictures, SI5480DU-T1-E3 price, #SI5480DU-T1-E3 supplier
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Email: sales@shunlongwei.com
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Manufacturer Part Number: SI5480DU-T1-E3
Rohs Code: Yes
Part Life Cycle Code: Obsolete
Ihs Manufacturer: VISHAY SILICONIX
Package Description: SMALL OUTLINE, R-XDSO-C3
Pin Count: 8
ECCN Code: EAR99
Manufacturer: Vishay Siliconix
Risk Rank: 5.83
Case Connection: DRAIN
Configuration: SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min: 30 V
Drain Current-Max (ID): 12 A
Drain-source On Resistance-Max: 0.016 Ω
FET Technology: METAL-OXIDE SEMICONDUCTOR
JESD-30 Code: R-XDSO-C3
JESD-609 Code: e3
Moisture Sensitivity Level: 1
Number of Elements: 1
Number of Terminals: 3
Operating Mode: ENHANCEMENT MODE
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Peak Reflow Temperature (Cel): 260
Polarity/Channel Type: N-CHANNEL
Pulsed Drain Current-Max (IDM): 30 A
Qualification Status: Not Qualified
Surface Mount: YES
Terminal Finish: MATTE TIN
Terminal Form: C BEND
Terminal Position: DUAL
Time
Power Field-Effect Transistor, 12A I(D), 30V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, CHIPFET-8
Shunlongwei Inspected Every SI5480DU-T1-E3 Before Ship, All SI5480DU-T1-E3 with 6 months warranty.
