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Si7252DP-T1-GE3
VISHAY Si7252DP-T1-GE3 New Power Field-Effect Transistor, 36.7A I(D), 100V, 0.017ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8, Si7252DP-T1-GE3 pictures, Si7252DP-T1-GE3 price, #Si7252DP-T1-GE3 supplier
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Email: sales@shunlongwei.com
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Manufacturer Part Number: SI7252DP-T1-GE3
Rohs Code: Yes
Part Life Cycle Code: Active
Ihs Manufacturer: VISHAY INTERTECHNOLOGY INC
Package Description: SMALL OUTLINE, R-PDSO-C6
ECCN Code: EAR99
Manufacturer: Vishay Intertechnologies
Risk Rank: 2.26
Avalanche Energy Rating (Eas): 20 mJ
Case Connection: DRAIN
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min: 100 V
Drain Current-Max (ID): 36.7 A
Drain-source On Resistance-Max: 0.017 Ω
FET Technology: METAL-OXIDE SEMICONDUCTOR
JESD-30 Code: R-PDSO-C6
JESD-609 Code: e3
Moisture Sensitivity Level: 1
Number of Elements: 2
Number of Terminals: 6
Operating Mode: ENHANCEMENT MODE
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Pulsed Drain Current-Max (IDM): 80 A
Surface Mount: YES
Terminal Finish: Matte Tin (Sn)
Terminal Form: C BEND
Terminal Position: DUAL
Time
Power Field-Effect Transistor, 36.7A I(D), 100V, 0.017ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
Shunlongwei Inspected Every Si7252DP-T1-GE3 Before Ship, All Si7252DP-T1-GE3 with 6 months warranty.
