Sell VISHAY Si7703EDN-T1-GE3 New Stock

Si7703EDN-T1-GE3 SINGLE P-CH 20V (D-S) MOSFET+SCHOTTKY - Tape and Reel; Si7703EDN-T1-GE3
  • Part Number:    

    Si7703EDN-T1-GE3

  • Category:    

    ICs

  • Manufacturer:    

    VISHAY

  • Packaging:    

    QFN

  • Data Code:    

    08+

  • Qty Available:    

    9125

Whatsapp / Wechat ID: +8618924651869
Email us: sales@shunlongwei.com
inquiry now
#Si7703EDN-T1-GE3 VISHAY Si7703EDN-T1-GE3 New SINGLE P-CH 20V (D-S) MOSFET+SCHOTTKY - Tape and Reel, Si7703EDN-T1-GE3 pictures, Si7703EDN-T1-GE3 price, #Si7703EDN-T1-GE3 supplier
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Email: sales@shunlongwei.com

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Manufacturer Part Number: SI7703EDN-T1-GE3
Pbfree Code: Obsolete
Ihs Manufacturer: VISHAY SILICONIX
Package Description: SMALL OUTLINE, S-XDSO-C6
Pin Count: 8
ECCN Code: EAR99
Manufacturer: Vishay Siliconix
Risk Rank: 5.84
Case Connection: DRAIN
Configuration: SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min: 20 V
Drain Current-Max (Abs) (ID): 4.3 A
Drain Current-Max (ID): 4.3 A
Drain-source On Resistance-Max: 0.048 Ω
FET Technology: METAL-OXIDE SEMICONDUCTOR
JESD-30 Code: S-XDSO-C6
JESD-609 Code: e3
Moisture Sensitivity Level: 1
Number of Elements: 1
Number of Terminals: 6
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 150 °C
Package Body Material: UNSPECIFIED
Package Shape: SQUARE
Package Style: SMALL OUTLINE
Peak Reflow Temperature (Cel): 260
Polarity/Channel Type: P-CHANNEL
Power Dissipation-Max (Abs): 2.8 W
Pulsed Drain Current-Max (IDM): 20 A
Qualification Status: Not Qualified
Subcategory: Other Transistors
Surface Mount: YES
Terminal Finish: MATTE TIN
Terminal Form: C BEND
Terminal Position: DUAL
Time
SINGLE P-CH 20V (D-S) MOSFET+SCHOTTKY - Tape and Reel

Shunlongwei Inspected Every Si7703EDN-T1-GE3 Before Ship, All Si7703EDN-T1-GE3 with 6 months warranty.

Shunlongwei Co. Ltd.

Contact: Alice Peng

Tel:+86-755-82732562

E-mail: sales@shunlongwei.com

ADD:Rom512,Bldg#505, Shangbu Industrial Area, Huaqiang North Rd., SZ,518000,China.