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SI7886DP-T1
SILICON SI7886DP-T1 New Power Field-Effect Transistor, 15A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK, SOP-8, SI7886DP-T1 pictures, SI7886DP-T1 price, #SI7886DP-T1 supplier
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Manufacturer Part Number: SI7886DP-T1
Rohs Code: No
Part Life Cycle Code: Obsolete
Ihs Manufacturer: VISHAY INTERTECHNOLOGY INC
Package Description: SMALL OUTLINE, R-PDSO-C5
Manufacturer: Vishay Intertechnologies
Risk Rank: 8.73
Avalanche Energy Rating (Eas): 125 mJ
Case Connection: DRAIN
Configuration: SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min: 30 V
Drain Current-Max (Abs) (ID): 15 A
Drain Current-Max (ID): 15 A
Drain-source On Resistance-Max: 0.0045 Ω
FET Technology: METAL-OXIDE SEMICONDUCTOR
JESD-30 Code: R-PDSO-C5
JESD-609 Code: e0
Number of Elements: 1
Number of Terminals: 5
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 5.4 W
Pulsed Drain Current-Max (IDM): 60 A
Subcategory: FET General Purpose Power
Surface Mount: YES
Terminal Finish: Tin/Lead (Sn/Pb)
Terminal Form: C BEND
Terminal Position: DUAL
Transistor Application: SWITCHING
Transistor Element Material: SILICON
Power Field-Effect Transistor, 15A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK, SOP-8
Shunlongwei Inspected Every SI7886DP-T1 Before Ship, All SI7886DP-T1 with 6 months warranty.
