Sell SILICON SI9925DY New Stock

#SI9925DY SILICON SI9925DY New Power Field-Effect Transistor, 20V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8, SI9925DY pictures, SI9925DY price, #SI9925DY supplier
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Manufacturer Part Number: SI9925DY
Rohs Code: No
Part Life Cycle Code: Obsolete
Ihs Manufacturer: VISHAY INTERTECHNOLOGY INC
Package Description: SMALL OUTLINE, R-PDSO-G8
ECCN Code: EAR99
Manufacturer: Vishay Intertechnologies
Risk Rank: 5.81
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min: 20 V
Drain Current-Max (Abs) (ID): 5 A
Drain-source On Resistance-Max: 0.05 Ω
FET Technology: METAL-OXIDE SEMICONDUCTOR
JESD-30 Code: R-PDSO-G8
JESD-609 Code: e0
Number of Elements: 2
Number of Terminals: 8
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 2 W
Pulsed Drain Current-Max (IDM): 48 A
Subcategory: FET General Purpose Power
Surface Mount: YES
Terminal Finish: Tin/Lead (Sn/Pb)
Terminal Form: GULL WING
Terminal Position: DUAL
Transistor Element Material: SILICON
Power Field-Effect Transistor, 20V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8