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SI9955DY-T1
SILICON SI9955DY-T1 New Small Signal Field-Effect Transistor, 3A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SI9955DY-T1 pictures, SI9955DY-T1 price, #SI9955DY-T1 supplier
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Manufacturer Part Number: SI9955DY-T1
Part Life Cycle Code: Obsolete
Ihs Manufacturer: VISHAY SILICONIX
Package Description: SMALL OUTLINE, R-PDSO-G8
ECCN Code: EAR99
Manufacturer: Vishay Siliconix
Risk Rank: 5.81
Configuration: SEPARATE, 2 ELEMENTS
DS Breakdown Voltage-Min: 50 V
Drain Current-Max (ID): 3 A
Drain-source On Resistance-Max: 0.2 Ω
FET Technology: METAL-OXIDE SEMICONDUCTOR
JESD-30 Code: R-PDSO-G8
JESD-609 Code: e0
Number of Elements: 2
Number of Terminals: 8
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Polarity/Channel Type: N-CHANNEL
Power Dissipation Ambient-Max: 2 W
Qualification Status: Not Qualified
Surface Mount: YES
Terminal Finish: TIN LEAD
Terminal Form: GULL WING
Terminal Position: DUAL
Transistor Element Material: SILICON
Small Signal Field-Effect Transistor, 3A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Shunlongwei Inspected Every SI9955DY-T1 Before Ship, All SI9955DY-T1 with 6 months warranty.