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SSD15N10-C
Secos Corporation SSD15N10-C New Power Field-Effect Transistor, 15A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE, DPAK-3/2, SSD15N10-C pictures, SSD15N10-C price, #SSD15N10-C supplier
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Email: sales@shunlongwei.com
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METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code: TO-252
JESD-30 Code: R-PSSO-G2
Number of Elements: 1
Number of Terminals: 2
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 44.6 W
Pulsed Drain Current-Max (IDM): 24 A
Subcategory: FET General Purpose Power
Surface Mount: YES
Terminal Form: GULL WING
Terminal Position: SINGLE
Transistor Application: SWITCHING
Transistor Element Material: SILICON
Power Field-Effect Transistor, 15A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE, DPAK-3/2
Shunlongwei Inspected Every SSD15N10-C Before Ship, All SSD15N10-C with 6 months warranty.
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