#IXYS, #IXYH40N65C3H1, #IGBT_Module, #IGBT, IXYH40N65C3H1 Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel,; IXYH40N65C3H1
Manufacturer Part Number: IXYH40N65C3H1Rohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 2.15Collector Current-Max (IC): 80 ACollector-Emitter Voltage-Max: 650 VGate-Emitter Thr Voltage-Max: 6.5 VGate-Emitter Voltage-Max: 20 VOperating Temperature-Max: 175 °CPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 300 WSubcategory: Insulated Gate BIP TransistorsSurface Mount: NO Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel,