Content last revised on January 26, 2026
FZ200R65KF2 Infineon 6.5kV 200A Single IGBT Module for High-Voltage Traction and Energy Infrastructure
The FZ200R65KF2 is a specialized high-power IGBT Module engineered to meet the extreme demands of medium-voltage power conversion, delivering a robust 6500V blocking voltage and 200A collector current within the industry-standard IHV-B package. For 6.5kV applications prioritizing switching efficiency and long-term thermal stability in multi-level topologies, this module stands as a benchmark for engineering reliability. It effectively resolves the challenge of balancing high-voltage isolation with low switching losses in compact system designs. By utilizing advanced AlSiC baseplate technology and Trench/Fieldstop IGBT3 chips, it minimizes thermal fatigue in high-duty cycle environments. For high-voltage railway traction systems requiring maximum insulation margin, the FZ200R65KF2 provides a definitive solution through its 10.2kV AC insulation capability.
Application Scenarios & Value
Optimizing Performance in Rail Traction and Medium-Voltage Drives
The primary value of the FZ200R65KF2 lies in its ability to handle massive electrical stresses in Variable Frequency Drive (VFD) and traction applications. In high-fidelity engineering scenarios, such as a heavy-haul locomotive or a regional train transit system, the IGBT Module must manage rapid acceleration cycles that generate intense thermal fluctuations. The AlSiC (Aluminum Silicon Carbide) baseplate provides a thermal expansion coefficient matched to the ceramic substrate, significantly reducing mechanical stress during peak current demands.
Within a typical three-level neutral point clamped (NPC) inverter, the 6500V rating allows engineers to minimize the number of series-connected components, which inherently simplifies the Gate Drive logic and increases overall system MTBF (Mean Time Between Failures). While this model excels in 6.5kV architectures, systems requiring lower voltage but higher current densities might investigate the FZ1200R33KF2C as a factual alternative for 3300V platforms.
Beyond rail, this module is a critical component in HVDC (High Voltage Direct Current) transmission and large-scale Solar Inverter farms, where grid stability depends on the precision of the power semiconductor switching characteristics. The integration of Emitter Controlled 3 Diode technology ensures soft recovery behavior, which is vital for suppressing EMI in sensitive energy infrastructure environments.
Key Parameter Overview
Specifications and Technical Capability Interpretation
| Critical Specification | Official Value / Rating | Engineering Significance |
|---|---|---|
| Collector-Emitter Voltage (Vces) | 6500V | Provides safe operating margin for 3kV DC catenary systems. |
| Continuous DC Collector Current (Ic) | 200A (at Tc=80°C) | High current handling for high-density power blocks. |
| Insulation Test Voltage (Visol) | 10.2kV (RMS, f=50Hz, t=1 min) | Ensures safety and compliance with international rail standards. |
| Baseplate Material | AlSiC | Enhanced power cycling capability by matching CTE. |
| Technology Type | IGBT3 / Fieldstop | Low Vcesat and optimized switching losses (Eon/Eoff). |
Download the FZ200R65KF2 datasheet for detailed specifications and performance curves.
Technical & Design Depth Profiling
Decoding the AlSiC Baseplate and Trench IGBT3 Synergy
The FZ200R65KF2 represents a strategic shift toward high-reliability packaging. To understand its Thermal Management capability, consider the 6500V Vces as an ultra-high-pressure valve. In high-frequency switching, the internal losses can lead to "hot spots." The AlSiC baseplate acts like a precision heat-conductive shock absorber; it moves and expands at a rate nearly identical to the internal silicon and ceramic layers, preventing the solder-joint cracking common in traditional copper-baseplate modules under heavy Power Cycling.
The Trench/Fieldstop IGBT3 architecture provides a vertical carrier distribution that minimizes the Vce(sat)—the "on-state" electrical resistance. This is equivalent to widening a high-speed highway to reduce congestion; more current flows with less heat generated. When combined with the Emitter Controlled 3 Diode, the module achieves a "soft-switching" signature. This prevents voltage spikes that could otherwise damage the Gate Drive or breach the Safe Operating Area (SOA) during high-speed turn-off events in Medium Voltage Drives.
Industry Insights & Strategic Advantage
Fueling the Global Transition to Electrified Transport and Smart Grids
As global energy policy shifts toward Industrial 4.0 and carbon neutrality, the demand for 6.5kV semiconductors is accelerating. The FZ200R65KF2 is positioned at the intersection of grid-to-vehicle and grid-to-grid energy transfer. For engineers designing renewable energy hubs, the reliability of the IGBT Module is the single most important factor in Reducing Total Cost of Ownership (TCO). A failure in a remote wind farm or an undersea HVDC link is catastrophic; hence, the adoption of AlSiC-based modules is no longer an option but a requirement for long-term project viability.
Technological trends indicate a move toward higher integration. For a deeper understanding of how these modules facilitate such systems, refer to our analysis on IGBT Modules: The Backbone of High-Efficiency Power Systems. Furthermore, understanding the mechanisms of potential failure is essential for any high-voltage design team, as detailed in our guide on IGBT Failure Analysis. This module's alignment with IEC 61287 standards makes it a compliant and future-proof choice for international railway projects.
FAQ
How does the 10.2kV insulation rating impact system-level clearance design?
The 10.2kV rating provides a significant safety buffer, allowing for more compact converter housing designs while still meeting stringent international safety standards for railway and heavy industrial Safe Operating Area requirements.
What is the primary benefit of the AlSiC baseplate over standard copper?
The AlSiC baseplate offers a significantly lower Coefficient of Thermal Expansion (CTE) mismatch with the internal ceramic substrates, which drastically improves Power Cycling Capability and extends the module's lifespan in harsh traction environments.
Does the FZ200R65KF2 support parallel operation for higher current needs?
Yes, the FZ200R65KF2 exhibits a positive temperature coefficient for Vce(sat), which naturally assists in current sharing between modules. However, careful Gate Drive synchronization and symmetrical busbar layout are required to ensure balanced loading.
For engineering teams developing next-generation high-voltage platforms, the FZ200R65KF2 provides a validated foundation for efficiency and durability. For more technical resources on high-power semiconductors, visit the Infineon IGBT Module official portal.
