Infineon FP50R12KE3 New IGBT Module

Infineon FP50R12KE3 is a high-performance power module that designed to be used in wide range of industrial applications, including motor control, welding, and renewable energy systems.

FP50R12KE3 module combines the advantages of MOSFET & bipolar transistors to deliver high power efficiency, reliability, and fast switching speeds.

FP50R12KE3 power module features low-inductance design, allows for fast and precise switching.

FP50R12KE3  Features:
FP50R12KE3 IGBT Modules 1200V 50A PIM.  Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified):

Collector-emitter voltage at blocking operation: VCES 1200 V @Tvj = 25°C

Continuous DC collector current at TC=100°C, maximum Tvj=175°C: IC nom 50 A

Repetitive peak collector current with tp=1 ms: ICRM 100 A

Total power dissipation at TC=25°C, maximum Tvj=175°C: Ptot 280 W

Gate-emitter peak voltage: VGES: ±20V

Temperature under switching conditions: Tvj op -40~150°C