Blog

A comprehensive engineering comparison of Silicon (Si), Silicon Carbide (SiC), and Gallium Nitride (GaN) power semiconductors, focusing on reverse recovery, switching speed, and efficiency trade-offs.

TN vs. IPS: The ultimate industrial display selection guide. Compare viewing angles, gray scale inversion, and cost to choose the best panel for your HMI project.

Why does your LCD look like a negative? We demystify Grayscale Inversion, explain the 6 o'clock vs 12 o'clock datasheet trap, and compare TN vs IPS for industrial displays.

How does a TFT LCD actually work? We deconstruct the pixel structure, transistor logic, and optical layers to help engineers make informed decisions for industrial display selection

Explore how high-speed IGBT switching in VFDs causes motor insulation failure. Learn the impact of long cables, dv/dt, and voltage reflections, and strategies to protect motors.

In industrial motor drives, reliability is paramount. Learn why Short Circuit Withstand Time (tSC) is the critical safety parameter protecting IGBTs from catastrophic failure during faults.

Explore the essential trade-off between Vce(sat) and Eoff in IGBT design. Learn why switching frequency dictates device selection and how to choose the right module for your application.

Explore the performance differences between Silicon, SiC, and GaN in power electronics, comparing efficiency, frequency, and thermal management, and guiding engineers on when to adopt WBG semiconductors.

In the demanding world of automotive electronics and industrial motor drives, the Power MOSFET is often subjected to stresses that go far beyond simple “on” and “off” switching. One of the most critical—and often misunderstood—stress events is Avalanche Breakdown.When driving inductive loads such as solenoids, motors, or even the parasitic inductance of a long cable […]

A comprehensive engineering guide to MOSFET and IGBT gate driver design—covering gate charge, driver selection, resistor tuning, protection features, and advanced topologies.