Infineon's BSM150GT120DN2 is a high power IGBT(Insulated Gate Bipolar Transistor) module designed for use in motor drives, renewable energy systems, & industrial automation equipment.
This module(BSM150GT120DN2) has maximum collector current 150A, collector-emitter voltage 1200V, & low on-state voltage drop. It also features high short-circuit withstand capability and an integrated temperature sensor, providing a high level of protection and reliability in demanding environments.
The BSM150GT120DN2 is a half-bridge module, meaning it contains two IGBTs connected in a circuit configuration that allows for bidirectional current flow. The module is designed for easy installation and comes with a pre-applied thermal interface material for efficient heat dissipation.
BSM150GT120DN2 Deatils
IGBT Power Module
Preliminary data
• Solderable Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic:200A
Collector current Icp:400A
Collector power dissipation Pc:1250W
Collector-Emitter voltage VCES:2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5 *1 N·m
Trans IGBT Module N-CH 1.2KV 200A 39-Pin TRIPACK.
