FZ900R12KE4HOSA1: High-Current 1200V IGBT for Demanding Power Conversion Systems
Introduction to a High-Reliability Power Switching Solution
The Infineon FZ900R12KE4HOSA1 is a 1200V single IGBT module engineered for high-power applications where thermal performance and long-term reliability are paramount. This module delivers a potent combination of 1200V | 900A | VCE(sat) 1.75V (typ.), providing a robust foundation for efficient power conversion. Key engineering benefits include optimized switching losses for higher frequency operation and a VCE(sat) with a positive temperature coefficient, simplifying parallel operation. For system designers evaluating power stages for industrial motor drives, this module directly addresses the need for a component that can manage high current loads while maintaining thermal stability. What is the key advantage of its underlying technology? The use of Infineon's TRENCHSTOP™ IGBT4 technology results in lower conduction and switching losses, directly enhancing system efficiency. For high-power drive systems prioritizing efficiency and robust thermal management, the FZ900R12KE4HOSA1 provides a validated, high-performance solution.
Key Parameter Overview
Decoding the Specs for Efficient and Reliable Power Design
The technical specifications of the FZ900R12KE4HOSA1 are tailored for high-stress industrial environments. The parameters detailed below are critical for engineers performing thermal modeling, loss calculations, and reliability assessments for high-current inverter and converter designs.
| Parameter Category | Parameter | Value | Conditions |
|---|---|---|---|
| Maximum Ratings | Collector-Emitter Voltage (VCES) | 1200 V | Tvj = 25°C |
| Continuous DC Collector Current (IC nom) | 900 A | TC = 100°C, Tvj max = 175°C | |
| Repetitive Peak Collector Current (ICRM) | 1800 A | tP = 1 ms | |
| Total Power Dissipation (Ptot) | 4300 W | TC = 25°C, Tvj max = 175°C | |
| Electrical Characteristics | Collector-Emitter Saturation Voltage (VCEsat) | 1.75 V (typ.), 2.10 V (max.) | IC = 900 A, VGE = 15 V, Tvj = 25°C |
| Gate-Emitter Threshold Voltage (VGE(th)) | 5.2 V - 6.4 V | IC = 36.0 mA, VCE = VGE, Tvj = 25°C | |
| Total Switching Energy (Ets) | 260 mJ (typ.) | IC = 900 A, VCE = 600 V, VGE = ±15 V, RG = 1.6 Ω, Tvj = 150°C | |
| Thermal & Mechanical | Thermal Resistance, Junction to Case (RthJC) | 0.029 K/W (per IGBT) | - |
| Operating Junction Temperature (Tvj op) | -40 to +150°C | - |
Download the FZ900R12KE4HOSA1 datasheet for detailed specifications and performance curves.
Application Scenarios & Value
System-Level Benefits in High-Power Industrial and Renewable Energy Systems
The FZ900R12KE4HOSA1 is engineered to serve as a cornerstone component in power conversion systems where high current handling and efficiency are critical design criteria. Its robust thermal and electrical characteristics make it an excellent choice for a range of demanding applications.
- Industrial Motor Drives: In high-power Variable Frequency Drives (VFDs) for manufacturing, mining, or pumping applications, the module's 900A continuous current rating provides the necessary capacity to control large induction motors. Its low VCE(sat) directly translates to lower conduction losses, which is a significant factor in overall drive efficiency, especially under heavy load conditions.
- Wind Turbine Converters: The module's high reliability and 1200V blocking voltage are well-suited for the grid-side converters in wind power systems. It can effectively manage the power flow from the turbine to the grid, and its positive VCE(sat) temperature coefficient simplifies the design of paralleled modules needed to achieve multi-megawatt power levels.
- Uninterruptible Power Supplies (UPS): For large data centers and industrial facilities, the FZ900R12KE4HOSA1 can be used in the inverter stage of a high-capacity UPS. Its ability to handle high peak currents (ICRM of 1800A) is crucial for managing load transients and ensuring a stable, uninterrupted power source.
- High-Power Converters: The module is also a strong candidate for central solar inverters and other high-power DC-AC or DC-DC conversion platforms. The low switching losses enable higher switching frequencies, potentially reducing the size and cost of magnetic components in the system.
While the FZ900R12KE4HOSA1 is a powerful solution for a wide range of applications, for systems demanding even higher current capabilities, the related FZ1200R12KF5 offers an increased current rating within a similar voltage class.
Frequently Asked Questions (FAQ)
What is the significance of the VCE(sat) positive temperature coefficient?
A positive temperature coefficient for the collector-emitter saturation voltage (VCE(sat)) is a highly desirable characteristic for paralleling IGBT modules. It means that as a module heats up, its on-state resistance slightly increases. This creates a natural self-balancing effect; if one module in a parallel array starts to carry more current and heat up more than its neighbors, its rising VCE(sat) will inherently push some of the current to the cooler modules. This prevents thermal runaway and ensures stable, reliable current sharing without requiring complex external balancing circuits.
How does the RthJC of 0.029 K/W impact heatsink selection and thermal design?
The thermal resistance from junction to case (RthJC) is a critical measure of how efficiently heat can be transferred from the active semiconductor chip to the module's baseplate. A low value like 0.029 K/W indicates very efficient heat extraction. For a design engineer, this translates to tangible benefits: it allows for a smaller, more cost-effective heatsink for a given power dissipation, or it provides greater thermal margin, allowing the device to run cooler and more reliably with a standard heatsink. This is crucial for achieving high power density and extending the operational lifetime of the power system.
Is an external freewheeling diode required for this module?
Yes, the FZ900R12KE4HOSA1 is a single switch IGBT module and does not include an integrated freewheeling diode. For inductive load applications, such as motor drives or inverters, an external anti-parallel diode with appropriate voltage and current ratings must be connected across the collector and emitter terminals to provide a path for the freewheeling current when the IGBT is switched off. This is essential to protect the IGBT from potentially damaging overvoltage transients.
Request for Quotation
To inquire about the FZ900R12KE4HOSA1 for your project, please contact our sales team. We provide engineering support and competitive quotations to help you select the optimal components for your high-power applications.
