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Infineon BSM50GAL100D IGBT Module

BSM50GAL100D

BSM50GAL100D Siemens IGBT Module Preliminary data 1000V 70A

· Categories: IGBT Module
· Manufacturer: Infineon
· Price: US$
· Date Code: 2024+
. Available Qty: 420
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BSM50GAL100D Specification

Feature
VcE=1000V
Ic = 2x 70 Aat Tc=25'C
1 c=2x 50 A at Tc=80'C
Power module
Half-bridge/Chopper
Including fast free-wheel diodes
Package with insulated metal base plate
Package outlines/Circuit diagram: 2b,2c

Maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1000V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :70A
Collector current Icp 1ms Tc=25°C :140A
Collector power dissipation Pc:500W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C

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