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Siemens BSM50GAL100D IGBT Module

BSM50GAL100D

BSM50GAL100D Siemens IGBT Module Preliminary data 1000V 70A

· Categories: IGBT Module
· Manufacturer: Siemens
· Price: US$
· Date Code: 2024+
. Available Qty: 420
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BSM50GAL100D Specification

Feature

VcE=1000V

Ic = 2x 70 Aat Tc=25'C

1 c=2x 50 A at Tc=80'C

Power module

Half-bridge/Chopper

Including fast free-wheel diodes

Package with insulated metal base plate

Package outlines/Circuit diagram: 2b,2c

Maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1000V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :70A

Collector current Icp 1ms Tc=25°C :140A

Collector power dissipation Pc:500W

Isolation Voltage VIsol (AC 1 minute) :2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

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