BSM50GB100D Infineon 1000V 50A Dual IGBT Module

BSM50GB100D IGBT Module In-stock / Infineon: 1000V 50A dual configuration for efficient power conversion. 90-day warranty, for motor drives. Global fast shipping. Get quote.

· Categories: IGBT
· Manufacturer: Infineon
· Price: US$ 45
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Content last revised on November 23, 2025

BSM50GB100D: An Engineer's Perspective on a 1000V Industrial Power Module

An Engineering Overview of the BSM50GB100D

The BSM50GB100D is a robust 1000V dual IGBT module engineered for reliable thermal performance in demanding industrial applications, offering a balance of switching efficiency and simplified system integration. With core specifications of 1000V and 50A (at Tc=80°C), this module provides a dependable power switching solution. Key benefits include effective heat dissipation via its insulated metal baseplate and a streamlined half-bridge design with integrated fast recovery diodes. For engineers questioning how to ensure operational stability in 400V/480V AC line systems, the 1000V rating of the BSM50GB100D provides a substantial safety margin against transient overvoltages. For systems prioritizing operational robustness under challenging thermal loads, this module's design offers a reliable foundation.

Application Scenarios & Value

Delivering Reliability in Industrial Drives and Power Conversion

The BSM50GB100D is an optimal choice for power conversion systems where reliability and thermal stability are critical decision factors. For designers of Variable Frequency Drives (VFDs), this module’s 1000V collector-emitter voltage provides the necessary headroom for safe operation on 400V or 480V three-phase industrial mains, mitigating risks from voltage spikes. Its 50A continuous collector current rating at a case temperature of 80°C ensures it can handle the demanding load cycles typical in motor control. The integrated half-bridge configuration, complete with anti-parallel freewheeling diodes, simplifies the construction of inverter legs, reducing component count and potential points of failure.

This module also finds its place in high-power Uninterruptible Power Supply (UPS) systems and industrial Servo Drives, where its thermal performance and robust electrical characteristics contribute directly to longer operational life and system dependability. While the BSM50GB100D is well-suited for these applications, for systems requiring an even higher blocking voltage, the related BSM50GB120DN2 offers a 1200V rating.

Key Parameter Overview

A Function-Grouped Look at Core Specifications

The following parameters are critical for system design and performance evaluation. They highlight the module's capabilities in terms of voltage, current handling, and fundamental thermal and electrical characteristics derived from its official datasheet. For a comprehensive understanding, engineers should consult the complete performance curves and application notes.

Absolute Maximum Ratings (Tc = 25°C unless otherwise specified)
Collector-Emitter Voltage (VCES) 1000V Provides significant safety margin for 400V/480V AC line applications.
Continuous Collector Current (IC) @ Tc=80°C 50A Defines the module's steady-state current handling capability under typical industrial operating temperatures.
Gate-Emitter Voltage (VGES) ±20V Specifies the limits for the gate drive voltage.
Total Power Dissipation (Ptot) @ Tc=25°C 500W Indicates the maximum power the module can dissipate, directly related to its thermal performance.
IGBT & Diode Characteristics (Tj = 25°C)
Collector-Emitter Saturation Voltage (VCE(sat)) @ IC=50A 2.8V (typ.) A key factor in calculating conduction losses and overall system efficiency.
Gate Threshold Voltage (VGE(th)) 4.8V (min) to 6.2V (max) Ensures stable switching behavior and noise immunity.
Thermal Resistance, Junction-to-Case (Rth(j-c)) per IGBT ≤ 0.25 K/W A critical value for thermal design, indicating efficient heat transfer from the semiconductor to the case.

Download the BSM50GB100D datasheet for detailed specifications and performance curves.

Technical Deep Dive

Implications of Thermal Resistance and Saturation Voltage on System Design

What is the primary benefit of its low thermal resistance? Enhanced long-term reliability by minimizing junction temperature. The Thermal Resistance from junction to case (Rth(j-c)) of ≤ 0.25 K/W is a defining feature of the BSM50GB100D. Think of this parameter as the width of a highway for heat; a lower value is like adding more lanes, allowing thermal energy to escape the active silicon and transfer to the heatsink more efficiently. This directly enables either a more compact heatsink design for a given power level or allows the module to run cooler, significantly improving its operational lifespan and reliability in harsh industrial environments. For further reading, an in-depth guide can help in mastering IGBT thermal management.

Simultaneously, the collector-emitter saturation voltage (VCE(sat)) of 2.8V at its nominal current is pivotal for efficiency. This value can be viewed as the "toll" the current pays to pass through the IGBT when it is fully on. A lower toll means less energy is wasted as heat during the conduction phase. This reduction in conduction losses not only contributes to higher overall system efficiency but also lessens the thermal burden on the entire system, creating a positive feedback loop of improved reliability and performance.

Frequently Asked Questions

What is the significance of the 1000V VCES rating for industrial applications?

The 1000V VCES provides a critical safety margin for power converters operating on 400V or 480V AC lines. After rectification, the DC bus voltage can be around 560V to 680V. The 1000V rating ensures the device can withstand transient voltage spikes caused by inductive loads or line fluctuations, preventing catastrophic failure and enhancing system robustness.

How does the integrated fast recovery freewheeling diode in the BSM50GB100D benefit the design?

The integrated diode is co-packaged and optimized to work with the IGBT in a half-bridge configuration. This simplifies the design by eliminating the need for an external diode, saving board space and assembly costs. More importantly, it ensures matched performance, controlling voltage overshoots and reducing recovery losses during the switching of inductive loads like motors.

For engineering teams evaluating power modules for motor drives, UPS systems, or welding equipment, the BSM50GB100D presents a well-documented and reliable option. To further explore technical specifications or inquire about procurement for your next project, please reach out to our technical sales team for assistance.

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