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Infineon BSM50GB120DN2 New IGBT Module

#Infineon, #BSM50GB120DN2, #IGBT_Module, #IGBT, BSM50GB120DN2 50A/1200V/IGBT/2U;IGBT Modules 1200V 50A DUAL; BSM50GB120DN2

· Categories: IGBT Module
· Manufacturer: Infineon
· Price: US$ 45
· Date Code: 2019+
. Available Qty: 613
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BSM50GB120DN2 Specification

Sell BSM50GB120DN2, #Infineon #BSM50GB120DN2 New Stock, BSM50GB120DN2 50A/1200V/IGBT/2U;IGBT Modules 1200V 50A DUAL; BSM50GB120DN2, #IGBT_Module, #IGBT, #BSM50GB120DN2
Email: sales@shunlongwei.com
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Infineon BSM50GB120DN2 is a high-power IGBT (Insulated Gate Bipolar Transistor) module designed for industrial applications. BSM50GB120DN2 has a rated voltage 1200V & rated current 75A, which makes it suitable for use in high voltage and high current circuits.

The BSM50GB120DN2 consists of two IGBT chips in a half-bridge configuration with built-in driver circuitry, which simplifies the design of power electronics systems. The BSM50GB120DN2 module also features low power losses and high switching frequency capabilities, widely use in motor drives, renewable energy systems, and welding equipment.

The BSM50GB120DN2 is designed with a low-inductive construction, which reduces electromagnetic interference and ensures reliable and stable operation.

BSM50GB120DN2 Specification:

Manufacturer: Infineon

Product Category: IGBT Modules

RoHS: YES

Brand: Infineon Technologies

Product: IGBT Silicon Modules

Configuration: Half Bridge

Collector- Emitter Voltage VCEO Max: 1200 V

Collector-Emitter Saturation Voltage: 2.5 V

Continuous Collector Current at 25 C: 78 A

Gate-Emitter Leakage Current: 200 nA

Pd - Power Dissipation: 400 W

Package / Case: Half Bridge1

Maximum Operating Temperature: + 150 C

Packaging: Bulk

Maximum Gate Emitter Voltage: 20 V

Minimum Operating Temperature: - 40 C

Mounting Style: Screw

Factory Pack Quantity: 10

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