Shunlongwei Co Ltd.

Shunlongwei Co. ltd.

IGBT Module / LCD Display Distributor

Customer Service
+86-755-8273 2562

Infineon FF150R12KT3G IGBT Module

Infineon FF150R12KT3G: 1200V/150A IGBT. Its T-NPC 3-level topology delivers superior efficiency and power density for high-performance solar, UPS, and motor drive applications.

· Categories: IGBT Module
· Manufacturer: Infineon
· Price: US$ 34
· Date Code: 2019+
. Available Qty: 254
Like
Tweet
Pin It
4k
Email: sales@shunlongwei.com
Whatsapp: 0086 189 2465 1869

Contact us To Buy Now!

FF150R12KT3G Specification

Infineon FF150R12KT3G | Optimized Three-Level Inverter Performance

The Infineon FF150R12KT3G is not just another power module; it is a highly specialized solution engineered for next-generation power conversion systems. Housed in the industry-proven EconoDUAL™ 3 package, this 1200V, 150A IGBT module leverages a three-level T-type Neutral-Point Clamped (T-NPC) topology. This design is purpose-built for applications where maximizing efficiency and power density are non-negotiable, moving beyond the limitations of traditional two-level inverter designs.

Technical Deep Dive: The Power of T-NPC Topology and IGBT4

The exceptional performance of the FF150R12KT3G stems from two core technological pillars. Understanding these is key to unlocking its full potential in your design.

  • T-Type Neutral-Point Clamped (T-NPC) Topology: Unlike conventional two-level inverters that switch between the full positive and negative DC bus rails, the T-NPC topology introduces a third, neutral voltage level. This significantly reduces the voltage stress across the switching devices. The direct result is a dramatic reduction in switching losses, allowing for higher operating frequencies. This enables the use of smaller, lighter, and more cost-effective magnetic components in your system filter design.
  • Infineon IGBT4 Trench Field-Stop Technology: The heart of this module is the robust IGBT4 Trench Field-Stop silicon. This technology is optimized for a very low collector-emitter saturation voltage (Vce(sat)), which minimizes conduction losses during high-current operation. Combined with its high short-circuit capability and optimized switching softness, the IGBT4 ensures both high efficiency and exceptional reliability under demanding load conditions.

Application-Specific Advantages: Where the FF150R12KT3G Excels

Simply listing applications is not enough. Here’s how the Infineon FF150R12KT3G solves specific problems in key industries:

  • Solar Inverters: The primary goal is maximizing energy harvest. The module's high efficiency directly translates to a higher kWh output for the same solar array, increasing the return on investment. The lower losses also reduce heat dissipation, enabling more compact and reliable inverter designs, even for high-power installations.
  • Uninterruptible Power Supplies (UPS): In data centers and critical facilities, every watt of wasted energy adds up to significant operational costs. The FF150R12KT3G’s efficiency minimizes these parasitic losses, reducing electricity bills and thermal load on cooling systems. Its inherent reliability is crucial for ensuring uptime when it matters most.
  • Industrial Motor Drives: For advanced servo controls and high-frequency motor drives, the ability to operate at higher switching frequencies without thermal penalty is a game-changer. This allows for smoother motor operation, reduced audible noise, and faster dynamic response, improving the precision of automated systems.

Key Electrical Characteristics

For a detailed breakdown of all parameters, please refer to the official FF150R12KT3G Datasheet.

ParameterValue
Collector-Emitter Voltage (VCES)1200 V
Nominal Collector Current (IC nom.)150 A
Collector-Emitter Saturation Voltage (VCE(sat), typ. at IC nom.)1.70 V
Maximum Junction Temperature (Tvj max)150 °C (175°C max)

Strategic Selection: FF150R12KT3G vs. Conventional 2-Level Modules

Engineers often face a choice between topologies. While a standard 2-level IGBT module may be adequate for basic, cost-sensitive applications, it becomes a bottleneck in high-performance systems. The Infineon FF150R12KT3G is the clear choice when your design priorities include maximizing power conversion efficiency, increasing switching frequency to reduce system size, or improving the quality of the output waveform to minimize filtering requirements. The initial investment in a 3-Level Neutral Point Clamped inverter topology often pays for itself through system-level savings and superior performance.

Frequently Asked Questions (FAQ)

  • What is the purpose of the integrated NTC thermistor?The built-in NTC provides a precise, real-time temperature measurement directly at the module's substrate. This allows your control system to implement accurate over-temperature protection, derate power gracefully, and monitor long-term thermal stress, significantly enhancing system reliability and lifespan.
  • How does the three-level topology impact output filter design?The output voltage waveform of a three-level inverter has lower harmonic distortion (THD) compared to a two-level inverter operating at the same switching frequency. This means the output LC filter can be designed with smaller inductor and capacitor values, saving significant cost, space, and weight in the final product.

By integrating an advanced topology with proven silicon technology, the FF150R12KT3G provides a powerful tool for designing cutting-edge power electronics. To evaluate this module for your next project, contact our engineering team for a quote or explore our full range of IGBT modules for other high-performance options.

Latest Update
SanRex
Mitsubishi
Sharp
SAMSUNG