Shunlongwei Co Ltd.

Shunlongwei Co. ltd.

IGBT Module / LCD Display Distributor

Customer Service
+86-755-8273 2562

SanRex PK250HB160 IGBT Module

SanRex PK250HB160: 1600V/250A IGBT for high-reliability power systems. Its low VCE(sat) ensures superior efficiency and robust performance in industrial inverters.

· Categories: IGBT Module
· Manufacturer: SanRex
· Price: US$ 55
· Date Code: 2021+
. Available Qty: 540
Like
Tweet
Pin It
4k
Email: sales@shunlongwei.com
Whatsapp: 0086 189 2465 1869

Contact us To Buy Now!

PK250HB160 Specification

SanRex PK250HB160 | Engineered for High-Voltage Industrial Power Conversion

The SanRex PK250HB160 is a high-voltage IGBT module designed for engineers who require uncompromising reliability and performance in demanding power systems. This module is not just a collection of specifications; it's a robust solution engineered to provide stable, efficient power switching in applications where system uptime and durability are paramount. With its 1600V blocking voltage and 250A current rating, it offers significant design headroom for industrial-grade inverters and converters.

  • High Blocking Voltage (1600V): Provides superior safety margins and reliability in systems operating on 690V AC lines, or those susceptible to high voltage transients.
  • Low Conduction Loss: Features a low VCE(sat) of 2.7V (typical), minimizing static power dissipation and reducing the thermal load on cooling systems.
  • Robust Half-Bridge Configuration: The industry-standard half-bridge topology simplifies inverter leg design, making it ideal for 3-phase motor drives and power converters.
  • Superior Thermal Performance: Built on a high-conductivity copper baseplate and utilizing an AlN substrate, ensuring efficient heat extraction from the IGBT and FWD chips to the heatsink.

Key Parameters at a Glance

For engineers requiring quick access to critical data, the table below summarizes the core electrical and thermal characteristics of the PK250HB160. For a complete overview, including characteristic curves and detailed operating conditions, please download the official SanRex datasheet.

ParameterValue
Collector-Emitter Voltage (V_CES)1600V
Collector Current (I_C) @ Tc=80°C250A
Collector-Emitter Saturation Voltage (V_CE(sat)) @ Ic=250A2.7V (Typ.) / 3.3V (Max.)
Total Power Dissipation (P_C) @ Tc=25°C1560W
Thermal Resistance, Junction-to-Case (Rth(j-c)) per IGBT0.08 °C/W
Operating Junction Temperature (T_j)-40 to +150°C

Application Scenarios & Engineering Value

The robust design of the SanRex PK250HB160 makes it a strategic choice for several high-power applications where reliability directly translates to operational and financial value.

  • Medium Voltage Drives (MVDs): In industrial motor control for pumps, fans, and conveyors running on 600-690V AC lines, the 1600V rating provides essential protection against voltage spikes from long motor cables and regenerative braking. This reduces the need for complex and costly snubber circuits and enhances system longevity.
  • Renewable Energy Inverters: For wind turbines and large-scale solar farms, the module's high voltage capability and proven durability are critical. It can withstand the harsh electrical environments found in grid-tied power conversion, ensuring maximum energy harvest and minimizing costly field maintenance.
  • Industrial Power Supplies & UPS: In high-power Uninterruptible Power Supplies (UPS) and welding equipment, the low VCE(sat) contributes directly to higher overall system efficiency. This means less wasted energy, smaller heatsinks, and a more compact, cost-effective final product.

Technical Deep Dive: Balancing Performance and Ruggedness

At the 1600V class, the design challenge is managing the inherent trade-off between conduction losses (VCE(sat)) and switching losses. The PK250HB160 employs an optimized trench-gate field-stop IGBT structure that strikes a careful balance. It achieves a competitive VCE(sat) without excessively slowing down the switching speed, making it suitable for applications with switching frequencies up to several kilohertz. Furthermore, the excellent Thermal Resistance is a testament to its internal construction. The use of an AlN (Aluminum Nitride) ceramic insulator instead of standard Alumina (Al2O3) provides significantly better thermal conductivity, which is critical for preventing catastrophic failures under heavy load conditions. This focus on robust thermal engineering is a key factor in avoiding common IGBT failure modes related to overtemperature.

Engineer's FAQ

  • What are the recommended gate drive voltage settings for this module?

    For optimal performance and to ensure full saturation with minimal conduction losses, a gate drive voltage of +15V is recommended for turn-on. To ensure a fast and clean turn-off and provide immunity against Miller turn-on, a negative gate voltage of -8V to -15V is advised. Always consult the datasheet for specific gate charge (Qg) values to properly size your gate driver circuit.

  • Is paralleling these modules recommended for higher current applications?

    Yes, the PK250HB160 can be paralleled. However, successful paralleling requires careful engineering. Due to the positive temperature coefficient of VCE(sat) in these devices, thermal balancing is crucial to prevent current hogging by one module. This involves ensuring symmetrical PCB layout for the gate drive signals and power connections, and mounting the parallel modules on a common heatsink with uniform thermal resistance to ensure they operate at similar temperatures.

Latest Update
Mitsubishi