#Infineon, #BSM50GD120DN2G, #IGBT_Module, #IGBT, BSM50GD120DN2G 50A/1200V/IGBT/6U; IGBT Modules 1200V 50A 3-PHASE ; BSM50GD120DN2G
Manufacturer: Infineon Product Category: IGBT Modules RoHS: No Brand: Infineon Technologies Product: IGBT Silicon Modules Configuration: Hex Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 2.5 V Continuous Collector Current at 25 C: 78 A Gate-Emitter Leakage Current: 200 nA Pd - Power Dissipation: 400 W Package / Case: EconoPACK 3A Maximum Operating Temperature: + 150 C Maximum Gate Emitter Voltage: 20 V Minimum Operating Temperature: - 40 C Mounting Style: Screw Factory Pack Quantity: 10 50A/1200V/IGBT/6U; IGBT Modules 1200V 50A 3-PHASE