Infineon BSM25GD120DN2 IGBT Module

BSM25GD120DN2 Infineon
Feature
. Power module 3-phase full-bridge
. Including fast free-wheel diodes
. Package with insulated metal base plate
Maximum Ratings
Collector-emitter voltage VCE 1200V
Collecor-gate voltage RGE=20kΩ VCGR 1200V
Gate-emitter Voltage  VGES:±20V
DC Collector current TC=25°C Ic:35A
DC Collector current TC=80°C Ic:25A
Collector current Icp:400A
power dissipation per IGBT Tc=25°C Pc:200W
Insulation test voltage, t=1min. Vis:2500Vac
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C