Infineon FF200R12KT4 | High-Efficiency TRENCHSTOP™ IGBT4 Power Module
The Infineon FF200R12KT4 is a 1200V, 200A half-bridge IGBT module engineered for high-reliability power conversion systems. Housed in the industry-proven EconoPACK™ 3 package, this module leverages Infineon's advanced TRENCHSTOP™ IGBT4 technology to deliver an exceptional balance of low power loss and high operational robustness. It is a workhorse solution for demanding applications such as industrial motor drives, solar inverters, and uninterruptible power supplies (UPS), where efficiency and long-term performance are non-negotiable.
Technical Deep Dive: Where Performance Meets Reliability
The superior performance of the Infineon FF200R12KT4 stems from two core technological pillars that directly address common engineering challenges:
- TRENCHSTOP™ IGBT4 Technology: Moving beyond older planar designs, this trench-gate field-stop structure fundamentally optimizes the trade-off between conduction and switching losses.
- Technical Principle: The IGBT4 chip features a fine-patterned trench structure that allows for a higher carrier concentration in the on-state, resulting in a very low collector-emitter saturation voltage (VCE(sat)). Simultaneously, the field-stop layer ensures rapid charge carrier removal during turn-off, significantly reducing switching losses.
- Application Value: For system designers, this translates directly to reduced heat generation, allowing for smaller, more cost-effective heatsinks. The lower overall energy loss boosts total system efficiency, a critical factor in energy-conscious applications like solar power conversion and variable speed drives. For more on this, explore our guide on deconstructing the IGBT structure.
- Emitter Controlled 4 Fast Recovery Diode: The integrated freewheeling diode is co-packed and optimized for performance with the IGBT4 chip.
- Technical Principle: This diode is engineered for "soft" recovery characteristics. This means it avoids abrupt current changes during turn-off, which in turn minimizes induced voltage spikes (V=L*di/dt) across the system's parasitic inductances.
- Application Value: This "soft" behavior is a game-changer for EMC (Electromagnetic Compatibility) design. It drastically reduces high-frequency noise and voltage overshoot, simplifying snubber circuit design and often lowering the need for expensive EMI filtering components, accelerating time-to-market.
Solving Real-World Problems Across Applications
The Infineon FF200R12KT4 is not just a component; it's a problem-solver. Here’s how its features deliver tangible benefits in specific industrial scenarios:
- Variable Frequency Drives (VFDs): In motor control, low switching losses allow for higher PWM frequencies. This results in smoother motor rotation, reduced torque ripple, and less audible noise—enhancing the precision and user experience of the final product.
- Solar Inverters: Every percentage point of efficiency counts. The low VCE(sat) of the FF200R12KT4 minimizes conduction losses during peak solar irradiation, maximizing the energy harvested from the panels and improving the overall financial return of the installation.
- Uninterruptible Power Supply (UPS): Reliability is paramount. The module's high short-circuit withstand time and the robust EconoPACK™ package ensure the UPS can handle fault conditions without failure. Its high efficiency also means less battery power is wasted as heat, extending runtime during a power outage.
- Welding Equipment: Welding applications demand rapid and precise control of high currents. The fast and clean switching of the FF200R12KT4 enables a stable arc and high-quality welds, while its thermal performance handles the demanding load cycles inherent to the process.
Key Technical Parameters
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (Vces) | 1200 V |
| Continuous Collector Current (Ic @ Tc=80°C) | 200 A |
| Collector-Emitter Saturation Voltage (Vce(sat) @ Ic=200A, Tvj=25°C) | 1.70 V (Typ.) |
| Maximum Junction Temperature (Tvj max) | 150°C (175°C in overload) |
| Package | EconoPACK™ 3 |
| Datasheet | For full specifications, please refer to the official FF200R12KT4 Datasheet. |
Comparison and Selection Guidance
When selecting an IGBT Module, it's crucial to match the technology to the application's needs. The Infineon FF200R12KT4, based on TRENCHSTOP™ IGBT4, is a highly balanced and mature choice. How does it compare to a module using newer TRENCHSTOP™ IGBT7 technology?
- Infineon FF200R12KT4 (IGBT4): Represents an optimal point of performance, cost, and proven reliability. It is exceptionally well-suited for applications with switching frequencies in the 4 kHz to 20 kHz range, making it a go-to solution for mainstream industrial drives and power supplies.
- IGBT7-Based Modules: These are optimized for even lower conduction losses (Vce(sat)) and are designed to run at higher operating temperatures. They are the premium choice for next-generation systems pushing the boundaries of power density or for applications where minimizing conduction losses is the absolute top priority.
For most new designs and system upgrades seeking a significant performance boost over older IGBT generations without moving to the latest premium-priced technology, the FF200R12KT4 offers the most compelling value proposition. If your design requires specific guidance, please don't hesitate to contact our technical team.
