Infineon FP40R12KT3 New IGBT Module

Infineon FP40R12KT3 is a high-power IGBT (Insulated Gate Bipolar Transistor) module that is widely used in industrial and automotive applications.

This module(FP40R12KT3) consists of two IGBTs in a half-bridge configuration, allows for high current and voltage handling capabilities.

FP40R12KT3 module has maximum collector-emitter voltage (VCE) 1200V & maximum collector current (IC) 40A, with a peak current 160A. It has a low on-state voltage drop and a fast switching speed, widely use in motor drives, renewable energy systems, and welding equipment.

FP40R12KT3 Specification:
Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: YES
Product: IGBT Silicon Modules
Configuration: Hex
Collector- Emitter Voltage VCEO Max: 1200 V
Continuous Collector Current at 25 C: 55 A
Maximum Operating Temperature: + 125 C
Package / Case: Econo 2
Packaging: Tray
Brand: Infineon Technologies
Maximum Gate Emitter Voltage: +/- 20 V
Minimum Operating Temperature: - 40 C
Mounting Style: Screw
Factory Pack Quantity: 10
IGBT Modules N-CH 1.2KV 55A