Content last revised on December 16, 2025
FZ1200R12HE4P: A High-Efficiency 1200V IGBT for Demanding Power Conversion Systems
Engineered for high-power inverter systems where efficiency and thermal stability are paramount, the Infineon FZ1200R12HE4P is a high-performance IGBT module designed to minimize system-level losses. With its core specifications of 1200V and 1200A, and a typical collector-emitter saturation voltage (VCE(sat)) of 1.70V, this device provides a robust solution for power-dense applications. Its primary benefits include significantly reduced conduction and switching losses and enhanced thermal performance, enabling more compact and reliable inverter designs. For system designs where minimizing power losses is the principal driver of component selection, the FZ1200R12HE4P's Trench/Fieldstop IGBT4 technology makes it a strategically sound choice.
Key Parameter Overview
Decoding the Specs for Enhanced Thermal and Electrical Efficiency
The performance of the FZ1200R12HE4P is defined by its electrical and thermal characteristics, which are critical for system designers to understand. The values below are extracted from the official datasheet and represent the foundation for its application in high-power electronics. Highlighting these key metrics is crucial for accurate performance modeling and reliability engineering.
| Parameter | Value | Notes |
| Collector-Emitter Voltage (VCES) | 1200 V | (at Tvj = 25°C) |
| Nominal Collector Current (IC nom) | 1200 A | (at TH = 100°C, Tvj max = 175°C) |
| Repetitive Peak Collector Current (ICRM) | 2400 A | (tP = 1 ms) |
| Collector-Emitter Saturation Voltage (VCEsat) | typ. 1.70 V / max. 2.15 V | (at IC = 1200 A, VGE = 15 V, Tvj = 25°C) |
| Total Switching Energy (Ets) | typ. 370 mJ | (at IC = 1200 A, VCE = 600V, VGE = ±15 V, RG = 1.6 Ω, Tvj = 150°C) |
| Thermal Resistance, Junction-to-Case (RthJC) | max. 0.024 K/W (per IGBT) | |
| Maximum Operating Junction Temperature (Tvj op) | 150 °C |
Download the FZ1200R12HE4P datasheet for detailed specifications and performance curves.
Application Scenarios & Value
Achieving System-Level Benefits in Megawatt-Scale Inverters
The FZ1200R12HE4P is engineered for high-stress, high-power applications where both efficiency and long-term reliability are non-negotiable. For systems requiring robust performance in multi-megawatt applications, this module is the optimal choice.
A prime engineering scenario for the FZ1200R12HE4P is in the power conversion stage of Wind Turbine Converters. In these systems, every fraction of a percent in efficiency translates to significant energy yield over the turbine's lifespan. The module's low collector-emitter saturation voltage (VCEsat) of 1.70V (typical) is a decisive factor. A lower VCEsat is akin to reducing the friction in a pipeline; it directly cuts down on conduction losses—the heat generated while the switch is on and conducting 1200A of current. This reduction in waste heat not only boosts the overall system efficiency but also lessens the burden on the cooling system, potentially allowing for a smaller, lighter, and more cost-effective heatsink design. This benefit is crucial in the nacelle of a wind turbine where space and weight are at a premium. Furthermore, its integration of Trench/Fieldstop IGBT4 technology is central to achieving low switching losses, a key enabler for modern Grid-Tied Inverters and high-power Industrial Motor Drives. For designs that require similar voltage ratings but operate at lower power levels, the related FZ900R12KE4 offers a 900A alternative within the same technology family.
Technical Deep Dive
A Closer Look at IGBT4 and Emitter Controlled 4 Diode Technology
The core of the FZ1200R12HE4P's performance lies in its combination of Infineon's Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode technologies. This pairing is not a simple co-packaging of components; it is an optimized chipset engineered to balance two traditionally conflicting parameters: conduction losses (VCEsat) and switching losses (Eon/Eoff). The Trench/Fieldstop structure of the IGBT allows for a thinner silicon drift region, which is a primary reason for its low VCEsat.
The freewheeling diode (FWD) is just as critical. The Emitter Controlled 4 diode is designed for soft, low-loss switching characteristics. Imagine turning off a high-pressure water valve instantly; it would create a damaging "water hammer" effect. A soft recovery diode acts like a valve that closes quickly but smoothly, minimizing voltage overshoots and oscillations during the IGBT turn-on event. This "softness" reduces electromagnetic interference (EMI) and lessens the stress on the IGBT, contributing to the module’s reliability in applications like high-frequency induction heating and large-scale Uninterruptible Power Supplies (UPS). The synergy between the IGBT and diode ensures that the module performs efficiently across a wide range of operating conditions.
Frequently Asked Questions (FAQ)
What is the primary advantage of the pre-applied Thermal Interface Material (TIM)?
The pre-applied TIM ensures a consistent and optimized thermal connection between the module's baseplate and the heatsink. This eliminates guesswork during assembly, reduces process time, and guarantees a low, repeatable thermal resistance (RthCH), which is crucial for effective heat dissipation and achieving maximum operational reliability.
How does the maximum operating junction temperature (Tvj op) of 150°C impact system design?
The 150°C operating temperature provides significant thermal headroom. This allows designers to operate the module at higher power levels, handle unexpected overload conditions, or design more compact cooling systems. It directly translates to a more robust and reliable system, especially in environments with high ambient temperatures.
What is the significance of the IHM-B housing?
The IHM-B (Industry-standard Half-bridge Module B) is a widely adopted package format. Its standardized dimensions (140 mm x 130 mm) and terminal layout simplify the mechanical design of the busbars and heatsink, facilitating easier integration into existing and new power stack designs. This standardization helps reduce design cycle times and simplifies sourcing.
How do the switching energies (Eon and Eoff) of the FZ1200R12HE4P affect inverter performance?
The specified turn-on (Eon) and turn-off (Eoff) energies, which sum to a typical total switching energy (Ets) of 370 mJ at 150°C, directly determine the switching losses. Lower switching losses are critical for applications operating at higher frequencies, as these losses are proportional to the switching frequency. By minimizing this energy, the FZ1200R12HE4P enables higher efficiency and reduces the thermal load, which is a core requirement for efficient commercial EV charging stations and solar inverters.
From a strategic standpoint, incorporating a module like the FZ1200R12HE4P allows for the design of next-generation power converters that not only meet today's efficiency standards but are also positioned to comply with future regulations on energy consumption and power density. Its underlying IGBT4 technology provides a stable and proven platform for building high-reliability systems with a long operational lifespan.
